US Patent Application 17827755. FERROELECTRIC FIELD EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME simplified abstract

FERROELECTRIC FIELD EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Gerben Doornbos of Kessel-Lo (BE)]]

[[Category:Oreste Madia of Leuven (BE)]]

[[Category:Georgios Vellianitis of Heverlee (BE)]]

[[Category:Marcus Johannes Henricus Van Dal of Linden (BE)]]

FERROELECTRIC FIELD EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17827755 titled 'FERROELECTRIC FIELD EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME

Simplified Explanation

The patent application describes a device and methods for its formation.

• The device includes a substrate, source/drain regions, a ferroelectric layer, a gate electrode, and two conductive contacts.
• The substrate serves as a base for the device.
• The source/drain regions are located on top of the substrate.
• The ferroelectric layer is positioned over the substrate.
• The gate electrode is in contact with the ferroelectric layer.
• The first conductive contact is located at one end of the gate electrode.
• The second conductive contact is located at the opposite end of the gate electrode.
• The first and second conductive contacts allow a current to flow from one contact through the gate electrode to the other contact.

Original Abstract Submitted

A device and methods of forming the same are described. The device includes a substrate, source/drain regions disposed over the substrate, a ferroelectric layer disposed over the substrate, a gate electrode in contact with the ferroelectric layer, a first conductive contact disposed at a first end of the gate electrode, and a second conductive contact disposed at a second end opposite the first end of the gate electrode. The first and second conductive contacts are configured to allow a current to flow from the first conductive contact through the gate electrode to the second conductive contact.