US Patent Application 18231772. RADIO FREQUENCY SWITCH simplified abstract

RADIO FREQUENCY SWITCH

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Jun-De Jin of Hsinchu City (TW)

RADIO FREQUENCY SWITCH - A simplified explanation of the abstract

This abstract first appeared for US patent application 18231772 titled 'RADIO FREQUENCY SWITCH

Simplified Explanation

The abstract describes a RF switch module and methods for its fabrication and operation.

• The RF switch module is designed to alternate between connecting an antenna to a transmitter transmission line or a receiver transmission line.
• The goal of the switch module is to reduce distortion of signals at high frequencies, improve insertion loss, and maintain isolation.
• The switch circuit in the module consists of multiple field effect transistors (FETs).
• Each FET in the switch circuit has stacked gate dielectrics and at least three metal contacts to a conductive gate.
• The stacked gate dielectrics include at least one layer of a negative-capacitance material.
• The use of negative-capacitance material in the first dielectric layer helps to achieve the desired improvements in signal quality.
• The disclosed invention provides a solution for effectively switching signals between a transmitter and receiver while maintaining signal integrity.

Original Abstract Submitted

Disclosed is a RF switch module and methods to fabricate and operate such RF switch to alternatively couple an antenna to either a transmitter transmission line or a receiver transmission line to realize lower distortion of a signal at high frequencies with improved insertion loss and without affecting isolation. In one embodiment, a Radio Frequency (RF) switch module, includes, a switch circuit for switching between transmitting first signals from a transmitter unit to an antenna and transmitting second signals from the antenna to the receiver unit, wherein the switch circuit comprises a plurality of field effect transistors (FETs), wherein each of the plurality of FETs comprises stacked gate dielectrics and at least three metal contacts to a conductive gate, wherein the stacked gate dielectrics comprises at least one first dielectric layer, wherein the first dielectric layer comprises a negative-capacitance material.