US Patent Application 18446113. Semiconductor Structures And Methods Of Forming The Same simplified abstract
Contents
Semiconductor Structures And Methods Of Forming The Same
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Li-Zhen Yu of New Taipei City (TW)
Cheng-Chi Chuang of New Taipei City (TW)
Kuan-Lun Cheng of Hsin-Chu (TW)
Chih-Hao Wang of Hsinchu County (TW)
Semiconductor Structures And Methods Of Forming The Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446113 titled 'Semiconductor Structures And Methods Of Forming The Same
Simplified Explanation
The patent application describes a method for forming conductive features on a semiconductor substrate.
- A semiconductor substrate is prepared and a layer of dielectric material is formed on top of it.
- A trench is created in the dielectric layer.
- The trench is filled with a conductive layer, which is then segmented to form two separate conductive features.
- A recess is formed between the two conductive features.
- The recess is filled with a second layer of dielectric material.
- The resulting structure has the conductive features end-capped by portions of the first and second dielectric layers.
Original Abstract Submitted
A method having a semiconductor substrate received and a first dielectric layer is formed over the semiconductor substrate. A trench is formed in the first dielectric layer. The trench is filled to form a conductive layer in the first dielectric layer. The conductive layer is segmented to form a first conductive feature and a second conductive feature separated from each other by a recess. The recess is filled with a second dielectric layer, such that one or both of the conductive features are end-capped by a portion of the first dielectric layer and a portion of the second dielectric layer.
