US Patent Application 18447467. CIRCUIT DEVICES WITH GATE SEALS simplified abstract

CIRCUIT DEVICES WITH GATE SEALS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Sheng-Chou Lai of Taoyuan City (TW)

Tsung-Yu Chiang of New Taipei City (TW)

CIRCUIT DEVICES WITH GATE SEALS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447467 titled 'CIRCUIT DEVICES WITH GATE SEALS

Simplified Explanation

- The patent application describes a circuit device that includes gate stacks and gate seals. - The device is made by receiving a substrate with a fin extending from it. - A placeholder gate is formed on the fin, and first and second gate seals are formed on the sides of the placeholder gate. - The placeholder gate is then selectively removed, creating a recess between the side surfaces of the first and second gate seals. - A functional gate is then formed within the recess, between the side surfaces of the first and second gate seals.

• The circuit device includes gate stacks and gate seals.
• A placeholder gate is formed on a fin extending from a substrate.
• First and second gate seals are formed on the sides of the placeholder gate.
• The placeholder gate is selectively removed, creating a recess between the gate seals.
• A functional gate is formed within the recess, between the gate seals.

Original Abstract Submitted

Various examples of a circuit device that includes gate stacks and gate seals are disclosed herein. In an example, a substrate is received that has a fin extending from the substrate. A placeholder gate is formed on the fin, and first and second gate seals are formed on sides of the placeholder gate. The placeholder gate is selectively removed to form a recess between side surfaces of the first gate seal and the second gate seal. A functional gate is formed within the recess and between the side surfaces of the first gate seal and the second gate seal.