US Patent Application 18232533. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

Ya-Yi Tsai of New Taipei City (TW)

Yi-Chun Chen of Hsinchu City (TW)

Wei-Han Chen of Hsinchu City (TW)

Wei-Ting Guo of Hsinchu City (TW)

Shu-Yuan Ku of Hsinchu City (TW)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232533 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The patent application describes a method for fabricating a semiconductor device.

• A plurality of semiconductor fins is formed in a first region on a substrate.
• An isolation region is formed around the semiconductor fins.
• Dummy fins are formed above the isolation region and adjacent to the semiconductor fins.
• The semiconductor fins are etched to have the same height as the isolation region.
• The isolation region is selectively etched to create a recess next to the semiconductor fins.
• The semiconductor fins are further etched to remove them and create a recess in the substrate.

Original Abstract Submitted

A method of fabricating a semiconductor device is described. A plurality of semiconductor fins is formed in a first region on a substrate. An isolation region is formed around the plurality of semiconductor fins. Dummy fins are formed extending above the isolation region and laterally adjacent the plurality of semiconductor fins. A first etch is performed to etch the plurality of semiconductor fins such that a top surface of the plurality of semiconductor fins has a same height as a top surface of the isolation region. A second etch is performed selectively etching the isolation region to form a first recess in the isolation region laterally adjacent the semiconductor fins. A third etch is performed selectively etching the plurality of semiconductor fins to remove the plurality of semiconductor fins and to etch a second recess through the isolation region into the semiconductor substrate.