US Patent Application 18232533. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
Contents
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
Ya-Yi Tsai of New Taipei City (TW)
Yi-Chun Chen of Hsinchu City (TW)
Wei-Han Chen of Hsinchu City (TW)
Wei-Ting Guo of Hsinchu City (TW)
Shu-Yuan Ku of Hsinchu City (TW)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18232533 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Simplified Explanation
The patent application describes a method for fabricating a semiconductor device.
- A plurality of semiconductor fins is formed in a first region on a substrate.
- An isolation region is formed around the semiconductor fins.
- Dummy fins are formed above the isolation region and adjacent to the semiconductor fins.
- The semiconductor fins are etched to have the same height as the isolation region.
- The isolation region is selectively etched to create a recess next to the semiconductor fins.
- The semiconductor fins are further etched to remove them and create a recess in the substrate.
Original Abstract Submitted
A method of fabricating a semiconductor device is described. A plurality of semiconductor fins is formed in a first region on a substrate. An isolation region is formed around the plurality of semiconductor fins. Dummy fins are formed extending above the isolation region and laterally adjacent the plurality of semiconductor fins. A first etch is performed to etch the plurality of semiconductor fins such that a top surface of the plurality of semiconductor fins has a same height as a top surface of the isolation region. A second etch is performed selectively etching the isolation region to form a first recess in the isolation region laterally adjacent the semiconductor fins. A third etch is performed selectively etching the plurality of semiconductor fins to remove the plurality of semiconductor fins and to etch a second recess through the isolation region into the semiconductor substrate.