US Patent Application 18447855. SEMICONDUCTOR DEVICE WITH SELF-ALIGNED WAVY CONTACT PROFILE AND METHOD OF FORMING THE SAME simplified abstract

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SEMICONDUCTOR DEVICE WITH SELF-ALIGNED WAVY CONTACT PROFILE AND METHOD OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chia-Ta Yu of Hsinchu (TW)

Yen-Chieh Huang of Tainan City (TW)

Wei-Yuan Lu of Taipei City (TW)

Feng-Cheng Yang of Hsinchu County (TW)

Yen-Ming Chen of Hsin-Chu (TW)

SEMICONDUCTOR DEVICE WITH SELF-ALIGNED WAVY CONTACT PROFILE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447855 titled 'SEMICONDUCTOR DEVICE WITH SELF-ALIGNED WAVY CONTACT PROFILE AND METHOD OF FORMING THE SAME

Simplified Explanation

The patent application describes a semiconductor device and a method of manufacturing it.

  • The semiconductor device includes a fin structure on a substrate, a gate structure, and a source/drain feature.
  • The fin structure has a channel region and a source/drain region.
  • The gate structure is positioned over the channel region of the fin structure.
  • The source/drain feature is grown epitaxially in the source/drain region of the fin structure.
  • The source/drain feature consists of a top epitaxial layer and a lower epitaxial layer.
  • The lower epitaxial layer has a wavy top surface.
  • The contact of the semiconductor device has a wavy bottom surface that matches the wavy top surface of the lower epitaxial layer.
  • The contact is engaged with the lower epitaxial layer of the source/drain feature.


Original Abstract Submitted

A semiconductor device and method of manufacturing the semiconductor device are provided. An exemplary semiconductor device comprises a fin disposed over a substrate, wherein the fin includes a channel region and a source/drain region; a gate structure disposed over the substrate and over the channel region of the fin; a source/drain feature epitaxially grown in the source/drain region of the fin, wherein the source/drain feature includes a top epitaxial layer and a lower epitaxial layer formed below the top epitaxial layer, and the lower epitaxial layer includes a wavy top surface; and a contact having a wavy bottom surface matingly engaged with the wavy top surface of the lower epitaxial layer of the source/drain feature.

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