US Patent Application 18361501. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chung-Ting Ko of Kaohsiung City (TW)]]

[[Category:Sung-En Lin of Hsinchu County (TW)]]

[[Category:Chi On Chui of Hsinchu City (TW)]]

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361501 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a method for manufacturing a semiconductor device.

• The method involves several steps:

 - Forming a semiconductor fin over a substrate.
 - Creating an isolation feature next to the semiconductor fin.
 - Recessing the isolation feature to create a recess.
 - Forming a metal-containing compound mask within the recess.
 - Depositing a stress layer over the metal-containing compound mask, ensuring contact with the top surface of the mask.
 - Annealing the metal-containing compound mask while the stress layer is in contact with it.

• The purpose of this method is to improve the manufacturing process of semiconductor devices.
• The formation of the metal-containing compound mask and the subsequent deposition of the stress layer help to enhance the performance and reliability of the semiconductor device.
• The annealing process further optimizes the properties of the metal-containing compound mask, leading to improved device performance.
• This method offers a more efficient and effective way to manufacture semiconductor devices with enhanced performance characteristics.

Original Abstract Submitted

A method for manufacturing a semiconductor device is provided. The method includes forming a semiconductor fin over a substrate; forming an isolation feature adjacent semiconductor fin; recessing the isolation feature to form a recess; forming a metal-containing compound mask in the recess; depositing a stress layer over the metal-containing compound mask, such that the stress layer is in contact with a top surface of the metal-containing compound mask; and annealing the metal-containing compound mask when the stress layer is in contact with the top surface of the metal-containing compound mask.