US Patent Application 17824690. GATE PROFILE MODULATION FOR SEMICONDUCTOR DEVICE simplified abstract

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GATE PROFILE MODULATION FOR SEMICONDUCTOR DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Tien-Shun Chang of Hsinchu (TW)]]

[[Category:Kuo-Ju Chen of Hsinchu (TW)]]

[[Category:Sih-Jie Liu of Hsinchu (TW)]]

[[Category:Wei-Fu Wang of Hsinchu (TW)]]

[[Category:Yi-Chao Wang of Hsinchu (TW)]]

[[Category:Li-Ting Wang of Hsinchu (TW)]]

[[Category:Su-Hao Liu of Hsinchu (TW)]]

[[Category:Huicheng Chang of Hsinchu (TW)]]

[[Category:Yee-Chia Yeo of Hsinchu (TW)]]

GATE PROFILE MODULATION FOR SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17824690 titled 'GATE PROFILE MODULATION FOR SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a method for manufacturing a semiconductor device.

  • The method involves forming a patterned structure on a substrate.
  • The patterned structure includes a dielectric layer and a dummy gate structure within the dielectric layer.
  • The patterned structure is then subjected to an ion implantation process.
  • The ion implantation process is used to modulate the profile of the dummy gate structure.


Original Abstract Submitted

A method for manufacturing a semiconductor device includes: forming a patterned structure on a substrate, the patterned structure including a dielectric layer and a dummy gate structure disposed in the dielectric layer; and subjecting the patterned structure to an ion implantation process so as to modulate a profile of the dummy gate structure.

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