US Patent Application 18446728. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chan Syun David Yang of Hsinchu (TW)
Chun-Jui Huang of New Taipei City (TW)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446728 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
Simplified Explanation
The patent application describes a semiconductor device called a fin field effect transistor and its manufacturing process.
- Gate spacers are formed over a semiconductor fin.
- A first gate stack is formed over the fin.
- A first sacrificial material with a large selectivity to the gate spacers is formed over the gate stack.
- A second sacrificial material with a large selectivity is formed over a source/drain contact plug.
- Etching processes are used to create openings through the first and second sacrificial materials.
- The openings are then filled with a conductive material.
Original Abstract Submitted
A semiconductor device such as a fin field effect transistor and its method of manufacture are provided. In some embodiments gate spacers are formed over a semiconductor fin, and a first gate stack is formed over the fin. A first sacrificial material with a large selectivity to the gate spacers is formed over the gate stack, and a second sacrificial material with a large selectivity is formed over a source/drain contact plug. Etching processes are utilized to form openings through the first sacrificial material and through the second sacrificial material, and the openings are filled with a conductive material.
