US Patent Application 18231847. SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING simplified abstract
Contents
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING
Organization Name
Taiwan Semiconductor Manufacturing Company Limited
Inventor(s)
Shih-Wei Peng of Hsinchu City (TW)
Jiann-Tyng Tzeng of Hsin Chu (TW)
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18231847 titled 'SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING
Simplified Explanation
The patent application describes a method for creating a semiconductor arrangement.
- A first source pad is formed on top of a semiconductor layer.
- A first nanosheet is created, which makes contact with the first source pad.
- A gate pad is placed next to the first nanosheet.
- A first drain pad is formed over the gate pad and also makes contact with the first nanosheet.
- A backside interconnect line is created underneath the gate pad and the first source pad.
- A first backside contact is formed, which makes contact with either the backside interconnect line, the first source pad, or the gate pad.
Original Abstract Submitted
A method of forming a semiconductor arrangement includes forming a first source pad over a semiconductor layer. A first nanosheet is formed contacting the first source pad. A gate pad is formed adjacent the first nanosheet. A first drain pad is formed over the gate pad and contacting the first nanosheet. A backside interconnect line is formed under the gate pad and the first source pad. A first backside contact is formed contacting at least one of the backside interconnect line, the first source pad, or the gate pad.
