US Patent Application 18360804. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE simplified abstract

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SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

CHUN-YEN Peng of HSINCHU (TW)

CHIH-YU Chang of NEW TAIPEI CITY (TW)

BO-FENG Young of TAIPEI CITY (TW)

TE-YANG Lai of HSINCHU (TW)

SAI-HOOI Yeong of HSINCHU COUNTY (TW)

CHI ON Chui of HSINCHU CITY (TW)

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18360804 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE

Simplified Explanation

The present disclosure describes a semiconductor device and a method for fabricating it.

  • The semiconductor device includes a substrate, a metal gate layer, a channel, and a ferroelectric layer.
  • The ferroelectric layer is located between the metal gate layer and the substrate.
  • The ferroelectric layer is made of a hafnium oxide-based material.
  • The hafnium oxide-based material consists of three portions with different phases: orthorhombic, monoclinic, and tetragonal.
  • The first portion of hafnium oxide with orthorhombic phase has a larger volume than the second portion with monoclinic phase.
  • The second portion with monoclinic phase has a larger volume than the third portion with tetragonal phase.


Original Abstract Submitted

The present disclosure provides a semiconductor device and a method for fabricating a semiconductor device. The semiconductor device includes a substrate, a metal gate layer over the substrate, a channel between a source region and a drain region in the substrate, and a ferroelectric layer, at least a portion of the ferroelectric layer is between the metal gate layer and the substrate, wherein the ferroelectric layer includes hafnium oxide-based material, the hafnium oxide-based material includes a first portion of hafnium oxide with orthorhombic phase, a second portion of hafnium oxide with monoclinic phase, and a third portion of the hafnium oxide with tetragonal phase, wherein a first volume of the first portion is greater than a second volume of the second portion, and the second volume of the second portion is greater than a third volume the third portion.