US Patent Application 18360804. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE simplified abstract
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
CHIH-YU Chang of NEW TAIPEI CITY (TW)
BO-FENG Young of TAIPEI CITY (TW)
SAI-HOOI Yeong of HSINCHU COUNTY (TW)
CHI ON Chui of HSINCHU CITY (TW)
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18360804 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR STRUCTURE
Simplified Explanation
The present disclosure describes a semiconductor device and a method for fabricating it.
- The semiconductor device includes a substrate, a metal gate layer, a channel, and a ferroelectric layer.
- The ferroelectric layer is located between the metal gate layer and the substrate.
- The ferroelectric layer is made of a hafnium oxide-based material.
- The hafnium oxide-based material consists of three portions with different phases: orthorhombic, monoclinic, and tetragonal.
- The first portion of hafnium oxide with orthorhombic phase has a larger volume than the second portion with monoclinic phase.
- The second portion with monoclinic phase has a larger volume than the third portion with tetragonal phase.
Original Abstract Submitted
The present disclosure provides a semiconductor device and a method for fabricating a semiconductor device. The semiconductor device includes a substrate, a metal gate layer over the substrate, a channel between a source region and a drain region in the substrate, and a ferroelectric layer, at least a portion of the ferroelectric layer is between the metal gate layer and the substrate, wherein the ferroelectric layer includes hafnium oxide-based material, the hafnium oxide-based material includes a first portion of hafnium oxide with orthorhombic phase, a second portion of hafnium oxide with monoclinic phase, and a third portion of the hafnium oxide with tetragonal phase, wherein a first volume of the first portion is greater than a second volume of the second portion, and the second volume of the second portion is greater than a third volume the third portion.
