US Patent Application 18245098. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE simplified abstract

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

Organization Name

Semiconductor Energy Laboratory Co., Ltd.

Inventor(s)

Hiromichi Godo of Isehara, Kanagawa (JP)

Yoshiyuki Kurokawa of Sagamihara, Kanagawa (JP)

Kazuki Tsuda of Atsugi, Kanagawa (JP)

Satoru Ohshita of Hadano, Kanagawa (JP)

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18245098 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

Simplified Explanation

The patent application describes a semiconductor device that has low power consumption.

• The device includes two transistors and a capacitor.
• The first transistor has a first gate and a first back gate, and the second transistor has a second gate and a second back gate.
• The gate insulating layer of the first back gate has ferroelectricity.
• The first transistor can retain a first potential corresponding to first data when it is in an off state.
• The second transistor can allow an output current to flow between its source and drain.

Original Abstract Submitted

A semiconductor device with low power consumption is provided. The semiconductor device includes a first transistor, a second transistor, and a capacitor. The first transistor includes a first gate and a first back gate, and the second transistor includes a second gate and a second back gate. A gate insulating layer for the first back gate has ferroelectricity. The first transistor has a function of, when being in an off state, retaining a first potential corresponding to first data. The second transistor has a function of making an output current flow between a source and a drain of the second transistor.