US Patent Application 18447153. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
Jump to navigation
Jump to search
Contents
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Sai-Hooi Yeong of Zhubei City (TW)
SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447153 titled 'SEMICONDUCTOR DEVICE AND METHOD
Simplified Explanation
The patent application describes a semiconductor device and manufacturing method that uses metallic seeds to crystallize a ferroelectric layer.
- A metal layer and a ferroelectric layer are formed next to each other in the device.
- The metal layer is diffused into the ferroelectric layer.
- A crystallization process is then performed using the metal layer as seed crystals.
- This method helps to improve the crystallization of the ferroelectric layer in the semiconductor device.
Original Abstract Submitted
A semiconductor device and method of manufacture are provided which utilizes metallic seeds to help crystallize a ferroelectric layer. In an embodiment a metal layer and a ferroelectric layer are formed adjacent to each other and then the metal layer is diffused into the ferroelectric layer. Once in place, a crystallization process is performed which utilizes the material of the metal layer as seed crystals.
