US Patent Application 18181229. FERROELECTRIC-BASED MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract

FERROELECTRIC-BASED MEMORY DEVICE AND METHOD OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Yi-Hsuan Chen of Taoyuan City (TW)]]

[[Category:Kuen-Yi Chen of Hsinchu City (TW)]]

[[Category:Yi Ching Ong of Hsinchu (TW)]]

[[Category:Yu-Wei Ting of Taipei City (TW)]]

[[Category:Kuo-Chi Tu of Hsin-Chu (TW)]]

[[Category:Kuo-Ching Huang of Hsinchu City (TW)]]

[[Category:Harry-Hak-Lay Chuang of Zhubei city (TW)]]

FERROELECTRIC-BASED MEMORY DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18181229 titled 'FERROELECTRIC-BASED MEMORY DEVICE AND METHOD OF FORMING THE SAME

Simplified Explanation

The patent application describes a method of forming a memory device using two substrates and a data-storage element.

• The method involves creating a trench in the first substrate and depositing a data-storage element in it.
• A thermal treatment is then performed on the first substrate to enhance the crystallization in the data-storage element.
• A first redistribution layer is formed over the first substrate, followed by the formation of a transistor in the second substrate of a second wafer.
• A second redistribution layer is then formed over the second substrate.
• Finally, the first and second wafers are bonded together after the thermal treatment.
• The data-storage element is electrically connected to the transistor through the first and second redistribution layers.

Original Abstract Submitted

A method of forming a memory device according to the present disclosure includes forming a trench in a first substrate of a first wafer, depositing a data-storage element in the trench, performing a thermal treatment to the first wafer to improve a crystallization in the data-storage element, forming a first redistribution layer over the first substrate, forming a transistor in a second substrate of a second wafer, forming a second redistribution layer over the second substrate, and bonding the first wafer with the second wafer after the performing of the thermal treatment. The data-storage element is electrically coupled to the transistor through the first and second redistribution layers.