US Patent Application 18358112. Semiconductor Device and Method simplified abstract
Contents
Semiconductor Device and Method
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Hsueh-Chang Sung of Zhubei City (TW)
Semiconductor Device and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 18358112 titled 'Semiconductor Device and Method
Simplified Explanation
The patent application describes a method for forming a gate structure over fins on a semiconductor substrate and creating an isolation region around the fins.
- The method involves depositing a spacer layer over the gate structure and fins, filling the regions between adjacent fins.
- A first etch is performed on the spacer layer, resulting in different thicknesses of remaining portions.
- The remaining portions within inner regions between fins have a thicker first thickness, while those outside the inner regions have a thinner second thickness.
- An epitaxial source/drain region is then formed adjacent to the gate structure and extending over the fins.
- The portions of the epitaxial source/drain region within the inner regions are separated from the thicker remaining portions of the spacer layer.
Original Abstract Submitted
A method includes forming a gate structure over fins protruding from a semiconductor substrate; forming an isolation region surrounding the fins; depositing a spacer layer over the gate structure and over the fins, wherein the spacer layer fills the regions extending between pairs of adjacent fins; performing a first etch on the spacer layer, wherein after performing the first etch, first remaining portions of the spacer layer that are within inner regions extending between pairs of adjacent fins have a first thickness and second remaining portions of the spacer layer that are not within the inner regions have a second thickness less than the first thickness; and forming an epitaxial source/drain region adjacent the gate structure and extending over the fins, wherein portions of the epitaxial source/drain region within the inner regions are separated from the first remaining portions of the spacer layer.
