US Patent Application 18362862. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Yu-Lien Huang of Hsinchu County (TW)]]

[[Category:Che-Ming Hsu of Hsinchu City (TW)]]

[[Category:Ching-Feng Fu of Taichung City (TW)]]

[[Category:Huan-Just Lin of Hsinchu City (TW)]]

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18362862 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The patent application describes a semiconductor device that includes several components: a substrate, a semiconductor fin, a shallow trench isolation (STI) structure, an air spacer, and a gate structure.

• The semiconductor fin is a structure that extends upwardly from the substrate.
• The STI structure surrounds the lower portion of the semiconductor fin in a lateral manner.
• An air spacer is positioned between the STI structure and the semiconductor fin.
• The gate structure extends across the semiconductor fin.
• The purpose of this semiconductor device is not explicitly mentioned in the abstract.

Original Abstract Submitted

A semiconductor device includes a substrate, a semiconductor fin, a shallow trench isolation (STI) structure, an air spacer, and a gate structure. The semiconductor fin extends upwardly from the substrate. The STI structure laterally surrounds a lower portion of the semiconductor fin. The air spacer is interposed the STI structure and the semiconductor fin. The gate structure extends across the semiconductor fin.