US Patent Application 18359542. EPITAXIAL STRUCTURES FOR FIN-LIKE FIELD EFFECT TRANSISTORS simplified abstract

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EPITAXIAL STRUCTURES FOR FIN-LIKE FIELD EFFECT TRANSISTORS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chia-Ta Yu of New Taipei City (TW)

Sheng-Chen Wang of Hsinchu City (TW)

Feng-Cheng Yang of Hsinchu County (TW)

Yen-Ming Chen of Hsin-Chu County (TW)

Sai-Hooi Yeong of Hsinchu County (TW)

EPITAXIAL STRUCTURES FOR FIN-LIKE FIELD EFFECT TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18359542 titled 'EPITAXIAL STRUCTURES FOR FIN-LIKE FIELD EFFECT TRANSISTORS

Simplified Explanation

The patent application describes a semiconductor structure with two fins protruding from a substrate, separated by isolation features.

  • The top surface of each fin is lower than the top surface of the isolation features.
  • Inner fin spacers are placed along the inner sidewalls of the fins, with a certain height measured from the top surface of the isolation features.
  • Outer fin spacers are placed along the outer sidewalls of the fins, with a lower height measured from the top surface of the isolation features compared to the inner fin spacers.
  • A source/drain structure merges the two fins and includes an air gap over the inner fin spacers.


Original Abstract Submitted

A semiconductor structure includes a first fin and a second fin protruding from a substrate, isolation features over the substrate to separate the first and the second fins, where a top surface of each of the first and the second fins is below a top surface of the isolation features, inner fin spacers disposed along inner sidewalls of the first and the second fins, where the inner fin spacers have a first height measured from a top surface of the isolation features, outer fin spacers disposed along outer sidewalls of the first and the second fins, where the outer fin spacers have a second height measured from the top surface of the isolation features that is less than the first height, and a source/drain (S/D) structure merging the first and the second fins, where the S/D structure includes an air gap having a top portion over the inner fin spacers.

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