US Patent Application 17826872. SELECTIVE EPITAXY TO CREATE A DOUBLE-DIFFUSED CHANNEL OVER PLANAR OR UNDERLYING TOPOGRAPHY simplified abstract

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SELECTIVE EPITAXY TO CREATE A DOUBLE-DIFFUSED CHANNEL OVER PLANAR OR UNDERLYING TOPOGRAPHY

Organization Name

TEXAS INSTRUMENTS INCORPORATED

Inventor(s)

Sheldon Douglas Haynie of MORGAN HILL CA (US)

Alexei Sadovnikov of SUNNYVALE CA (US)

SELECTIVE EPITAXY TO CREATE A DOUBLE-DIFFUSED CHANNEL OVER PLANAR OR UNDERLYING TOPOGRAPHY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17826872 titled 'SELECTIVE EPITAXY TO CREATE A DOUBLE-DIFFUSED CHANNEL OVER PLANAR OR UNDERLYING TOPOGRAPHY

Simplified Explanation

The patent application describes a method for forming a gate on a semiconductor layer of a substrate. Here are the key points:

  • A gate is formed on a semiconductor layer of a substrate.
  • A hard mask is formed over the gate and the semiconductor layer, exposing a portion of the semiconductor layer.
  • The exposed portion of the semiconductor layer is etched away in a specific manner to create a recess with a certain depth.
  • A first selective epitaxial growth is performed, where a first semiconductor material doped with a first dopant is grown on the semiconductor layer within the recess.
  • A second selective epitaxial growth is performed, where a second semiconductor material doped with a second dopant is grown on top of the first semiconductor material within the recess.
  • Finally, the hard mask is removed.


Original Abstract Submitted

A method includes forming a gate on a semiconductor layer of a substrate. A hard mask is formed over the gate and the semiconductor layer to expose a portion of the semiconductor layer. The exposed portion of the semiconductor layer is isotropically etched away to form a recess having a depth. A first selective epitaxial growth of a first semiconductor material doped with a first dopant is performed on the semiconductor layer in the recess. A second selective epitaxial growth of a second semiconductor material doped with a second dopant is performed on the first semiconductor material in the recess. The hard mask is then removed.

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