SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME

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SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18151021 titled 'SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME

Simplified Explanation

- The patent application describes a semiconductor device that includes a ferroelectric field effect transistor (FeFET). - The device is fabricated on a substrate and includes a gate electrode film made of a metal element. - A gate insulating film, made of a ferroelectric material, is positioned between the substrate and the gate electrode film. - A buffer oxide film, made of an oxide of a semiconductor material, is located between the gate insulating film and the gate electrode film. - The buffer oxide film is in contact with the gate insulating film. - The invention provides a method for fabricating this semiconductor device.

Original Abstract Submitted

A semiconductor device including a ferroelectric field effect transistor (FeFET) and a method for fabricating the same are provided. The semiconductor device includes a substrate, a gate electrode film including a metal element, on the substrate, a gate insulating film including a ferroelectric material between the substrate and the gate electrode film, and a buffer oxide film including an oxide of a semiconductor material between the gate insulating film and the gate electrode film, the buffer oxide film being in contact with the gate insulating film.

US Patent Application 18151021. SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME simplified abstract

Contents

SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME

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