US Patent Application 17879913. SEMICONDUCTOR STRUCTURE simplified abstract

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SEMICONDUCTOR STRUCTURE

Organization Name

CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor(s)

Jianfeng Xiao of Hefei City (CN)

Yi Tang of Hefei City (CN)

SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17879913 titled 'SEMICONDUCTOR STRUCTURE

Simplified Explanation

The patent application describes a semiconductor structure consisting of a substrate and an active pillar located above it.

  • The active pillar extends in a parallel direction to the substrate plane.
  • The active pillar is composed of a body area and a peripheral area.
  • The peripheral area includes a channel area.
  • The channel area is doped with the same type of ions as the body area.
  • The doping concentration of the channel area is higher than that of the body area.


Original Abstract Submitted

A semiconductor structure is provided. The semiconductor structure includes: a substrate and an active pillar located above the substrate. The active pillar extends in a first direction. The first direction is parallel to a plane where the substrate is located. The active pillar includes a body area extending in the first direction and a peripheral area surrounding the body area. The peripheral area includes a channel area. A type of doped ions of the channel area is the same as a type of doped ions of the body area, and a doping concentration of the channel area is greater than a doping concentration of the body area.