US Patent Application 17879913. SEMICONDUCTOR STRUCTURE simplified abstract
Contents
SEMICONDUCTOR STRUCTURE
Organization Name
CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor(s)
Jianfeng Xiao of Hefei City (CN)
SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17879913 titled 'SEMICONDUCTOR STRUCTURE
Simplified Explanation
The patent application describes a semiconductor structure consisting of a substrate and an active pillar located above it.
- The active pillar extends in a parallel direction to the substrate plane.
- The active pillar is composed of a body area and a peripheral area.
- The peripheral area includes a channel area.
- The channel area is doped with the same type of ions as the body area.
- The doping concentration of the channel area is higher than that of the body area.
Original Abstract Submitted
A semiconductor structure is provided. The semiconductor structure includes: a substrate and an active pillar located above the substrate. The active pillar extends in a first direction. The first direction is parallel to a plane where the substrate is located. The active pillar includes a body area extending in the first direction and a peripheral area surrounding the body area. The peripheral area includes a channel area. A type of doped ions of the channel area is the same as a type of doped ions of the body area, and a doping concentration of the channel area is greater than a doping concentration of the body area.
