US Patent Application 18358966. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Gerben Doornbos of Kessel-Lo (BE)]]

[[Category:Mauricio Manfrini of Hsinchu County (TW)]]

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18358966 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes a ferroelectric layer, two semiconductor layers, two gates, and contact structures.

• The ferroelectric layer has two surfaces, with a first semiconductor layer placed on the first surface and a second semiconductor layer placed on the second surface.
• Two gates, one on each semiconductor layer, are used to control the flow of current through the device.
• Contact structures are connected to both semiconductor layers, allowing for electrical connections to be made.

Original Abstract Submitted

A semiconductor includes a ferroelectric layer, a first semiconductor layer, a first gate, a second semiconductor layer, a second gate and contact structures. The ferroelectric layer has a first surface and a second surface opposite to the first surface. The first semiconductor layer is disposed on the first surface of the ferroelectric layer. The first gate is disposed on the first semiconductor layer over the first surface. The second semiconductor layer is disposed on the second surface of the ferroelectric layer. The second gate is disposed on the second semiconductor layer over the second surface. The contacts structures are connected to the first semiconductor layer and the second semiconductor layer.