US Patent Application 18366871. GATE STRUCTURE AND METHOD OF FORMING SAME simplified abstract
Contents
GATE STRUCTURE AND METHOD OF FORMING SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Shahaji B. More of Hsinchu (TW)
Chandrashekhar Prakash Savant of Hsinchu (TW)
Chun Hsiung Tsai of Xinpu Township (TW)
GATE STRUCTURE AND METHOD OF FORMING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18366871 titled 'GATE STRUCTURE AND METHOD OF FORMING SAME
Simplified Explanation
The patent application describes a semiconductor device and a method of forming it.
- The method involves creating a sacrificial gate on a substrate and then removing it to create an opening.
- A gate dielectric layer is then formed on the sidewalls and bottom of the opening.
- A first work function layer is added on top of the gate dielectric layer in the opening.
- A first protective layer is formed over the first work function layer in the opening.
- An etching process is performed to widen the upper portion of the opening.
- Finally, the opening is filled with a conductive material.
Original Abstract Submitted
A semiconductor device and a method of forming the same are provided. A method includes forming a sacrificial gate over an active region of a substrate. The sacrificial gate is removed to form an opening. A gate dielectric layer is formed on sidewalls and a bottom of the opening. A first work function layer is formed over the gate dielectric layer in the opening. A first protective layer is formed over the first work function layer in the opening. A first etch process is performed to widen an upper portion of the opening. The opening is filled with a conductive material.
