US Patent Application 18446919. FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME simplified abstract

From WikiPatents
Jump to navigation Jump to search

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Organization Name

DENSO CORPORATION

Inventor(s)

Hidefumi Takaya of Kariya-city (JP)

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446919 titled 'FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The patent application describes a field effect transistor design with specific layers and arrangements.

  • The transistor includes a p-type trench lower layer, multiple p-type deep layers, and multiple n-type deep layers.
  • The p-type trench lower layer is located below the trench and extends in the longitudinal direction of the trench.
  • The p-type deep layers protrude downward from a body layer and extend in a direction intersecting the trench.
  • The p-type deep layers are spaced at intervals in a direction perpendicular to the trench and are in contact with the p-type trench lower layer.
  • Each of the n-type deep layers is located in one of the intervals and is in contact with a gate insulating film at the side surface of the trench below the body layer.


Original Abstract Submitted

A field effect transistor includes a p-type trench lower layer, multiple p-type deep layers, and multiple n-type deep layers. The p-type trench lower layer is located below the trench, and extends in a longitudinal direction of the trench in a top view of a semiconductor substrate. Each of the p-type deep layers protrudes downward from a body layer, and extends in a first direction intersecting the trench in the top view of the semiconductor substrate. The p-type deep layers are spaced at intervals in a second direction perpendicular to the first direction, and are in contact with the p-type trench lower layer located below the trench. Each of the n-type deep layers is located in corresponding one of the intervals, and is in contact with a gate insulating film at a side surface of the trench located below the body layer.

Retrieved from "http://wikipatents.org/index.php?title=US_Patent_Application_18446919._FIELD_EFFECT_TRANSISTOR_AND_METHOD_OF_MANUFACTURING_THE_SAME_simplified_abstract&oldid=11776"