US Patent Application 18363439. MULTI-LAYERED INSULATING FILM STACK simplified abstract

MULTI-LAYERED INSULATING FILM STACK

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chieh-Ping Wang of Taichung (TW)

Ting-Gang Chen of Taipei City (TW)

Bo-Cyuan Lu of New Taipei City (TW)

Tai-Chun Huang of Hsinchu (TW)

Chi On Chui of Hsinchu (TW)

MULTI-LAYERED INSULATING FILM STACK - A simplified explanation of the abstract

This abstract first appeared for US patent application 18363439 titled 'MULTI-LAYERED INSULATING FILM STACK

Simplified Explanation

The patent application describes a method for forming a semiconductor device.

• The method involves forming a gate structure over a fin that protrudes above a substrate.
• An opening is then formed in the gate structure.
• A non-conformal first dielectric layer is formed along the sidewalls and bottom of the opening.
• The first dielectric layer has a larger thickness near the upper surface of the gate structure and a smaller thickness near the bottom of the opening.
• A second dielectric layer, made of a different material, is then formed over the first dielectric layer to fill the opening.

Original Abstract Submitted

A method for forming a semiconductor device includes: forming a gate structure over a fin, where the fin protrudes above a substrate; forming an opening in the gate structure; forming a first dielectric layer along sidewalls and a bottom of the opening, where the first dielectric layer is non-conformal, where the first dielectric layer has a first thickness proximate to an upper surface of the gate structure distal from the substrate, and has a second thickness proximate to the bottom of the opening, where the first thickness is larger than the second thickness; and forming a second dielectric layer over the first dielectric layer to fill the opening, where the first dielectric layer is formed of a first dielectric material, and the second dielectric layer is formed of a second dielectric material different from the first dielectric material.