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Category:H01L29/778
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Pages in category "H01L29/778"
The following 77 pages are in this category, out of 77 total.
1
- 17542322. SUPERCONDUCTOR GATE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17542485. HIGH ELECTRON MOBILITY TRANSISTOR WITH SOURCE AND DRAIN ELECTRODES BELOW THE CHANNEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17850078. SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHALCOGENIDE GROWTH FOR STACKED 2D CHANNELS simplified abstract (Intel Corporation)
- 17850623. STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED GROWTH simplified abstract (Intel Corporation)
- 17852016. 2D LAYERED GATE OXIDE simplified abstract (Intel Corporation)
- 17936380. SEMICONDUCTOR EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE simplified abstract (Huawei Technologies Co., Ltd.)
- 17936990. CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION simplified abstract (Intel Corporation)
- 17943443. GATE CUTS IN A GRATING PATTERN ACROSS AN INTEGRATED CIRCUIT simplified abstract (Intel Corporation)
- 17957821. GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract (Intel Corporation)
- 17957887. STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract (Intel Corporation)
- 17958362. TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS simplified abstract (Intel Corporation)
- 18151972. HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) HAVING AN INDIUM-CONTAINING LAYER AND METHOD OF MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18157478. VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL TYPE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18158192. Method of Implanting Dopants into a Group III-Nitride Structure and Device Formed simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18166391. HYBRID GATE FIELD EFFECT TRANSISTOR, METHOD FOR PREPARING HYBRID GATE FIELD EFFECT TRANSISTOR, AND SWITCH CIRCUIT simplified abstract (Huawei Technologies Co., Ltd.)
- 18171988. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18176453. NITRIDE SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18177318. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18180657. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18181042. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18193859. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18264202. NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE simplified abstract (Panasonic Intellectual Property Management Co., Ltd.)
- 18370125. WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18370134. WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER WIDTHS simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18370144. WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18373357. WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18373360. WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED THROUGH WAFER VIAS OUTSIDE OF TRANSISTOR LAYOUT simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18463417. FIELD EFFECT TRANSISTOR, PREPARATION METHOD THEREOF, AND SWITCH CIRCUIT simplified abstract (Huawei Technologies Co., Ltd.)
- 18466206. VERTICAL MULTICHANNEL GALLIUM NITRIDE TRANSISTOR simplified abstract (Robert Bosch GmbH)
- 18466223. SEMICONDUCTOR ELEMENT WITH SHIELDING simplified abstract (Robert Bosch GmbH)
- 18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18513404. HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18513942. ROUGH BUFFER LAYER FOR GROUP III-V DEVICES ON SILICON simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18533315. INTEGRATED DEVICE, SEMICONDUCTOR DEVICE, AND INTEGRATED DEVICE MANUFACTURING METHOD simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18540524. COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE simplified abstract (Sony Group Corporation)
2
- 20240014306. Semiconductor Structure with Features of D-mode and E-mode GaN Devices and Semiconductor Process Thereof simplified abstract (United Microelectronics Corp.)
- 20240021678. PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIER REGIONS simplified abstract (MACOM Technology Solutions Holdings, Inc.)
- 20240030328. QUANTUM DEVICES FORMED FROM A SINGLE SUPERCONDUCTING WIRE HAVING A CONFIGURABLE GROUND CONNECTION simplified abstract (Microsoft Technology Licensing, LLC)
- 20240039486. COMPOUND SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR COMPOUND SEMICONDUCTOR DEVICE, AND AMPLIFIER simplified abstract (Fujitsu Limited)
- 20240047527. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.)
- 20240055509. NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.)
B
- Blockchain patent applications on April 4th, 2024
- Blockchain patent applications on February 15th, 2024
- Blockchain patent applications on February 1st, 2024
- Blockchain patent applications on February 8th, 2024
- Blockchain patent applications on January 11th, 2024
- Blockchain patent applications on January 18th, 2024
- Blockchain patent applications on March 28th, 2024
H
I
- Intel corporation (20240105718). INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMICONDUCTOR REGIONS simplified abstract
- Intel corporation (20240105770). NECKED RIBBON FOR BETTER N WORKFUNCTION FILLING AND DEVICE PERFORMANCE simplified abstract
- Intel corporation (20240113101). CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION simplified abstract
- Intel corporation (20240113107). GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract
- Intel corporation (20240113177). STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract
- Intel corporation (20240120415). TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS simplified abstract
- Intel Corporation patent applications on April 11th, 2024
- Intel Corporation patent applications on April 4th, 2024
- Intel Corporation patent applications on February 29th, 2024
- Intel Corporation patent applications on March 14th, 2024
- Intel Corporation patent applications on March 28th, 2024
K
- Kabushiki kaisha toshiba (20240096967). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240096969). NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Kabushiki kaisha toshiba (20240097000). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- KABUSHIKI KAISHA TOSHIBA patent applications on March 14th, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on March 21st, 2024
S
T
U
- US Patent Application 17752970. HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING simplified abstract
- US Patent Application 18248990. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPONENT INCLUDING THE SAME simplified abstract
- US Patent Application 18364479. NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18364679. INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITH OPTIMIZATION OF DEVICE PERFORMANCE simplified abstract