US Patent Application 18248990. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPONENT INCLUDING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPONENT INCLUDING THE SAME
Organization Name
Panasonic Intellectual Property Management Co., Ltd.
Inventor(s)
Manabu Yanagihara of Osaka (JP)
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPONENT INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18248990 titled 'SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPONENT INCLUDING THE SAME
Simplified Explanation
The patent application describes a semiconductor device with specific components and their arrangement.
- The device includes a substrate, a first nitride semiconductor layer, and a second nitride semiconductor layer.
- Finger-shaped source electrodes are placed on the second nitride semiconductor layer.
- Finger-shaped drain electrodes are positioned at a distance from the source electrodes.
- Finger-shaped gate electrodes are located between the source and drain electrodes.
- The gate electrodes are connected to gate pads through integrated wirings.
- Multiple source pads and second gate integrated wirings are arranged alternately in a perpendicular direction to the gate electrodes.
Original Abstract Submitted
A semiconductor device includes: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer; finger-shaped source electrodes on the second nitride semiconductor layer; finger-shaped drain electrodes disposed so as to be spaced apart from the source electrodes; and finger-shaped gate electrodes respectively disposed between the source electrodes and the drain electrodes. The gate electrodes are electrically connected, via a first gate integrated wiring, a plurality of second gate integrated wirings and a third gate integrated wiring, to gate pads located on one or both ends of the third gate integrated wiring. A plurality of source pads and the plurality of second gate integrated wirings are formed alternately in a first direction perpendicular to the longitudinal direction of the gate electrodes.
