Kabushiki kaisha toshiba (20240096967). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Tatsuo Shimizu of Shinagawa Tokyo (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096967 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract consists of a first gallium nitride region that is an n-type semiconductor, and a second gallium nitride region in contact with the first region, which is a metal containing a first element selected from a group of elements.
- The semiconductor device includes a first gallium nitride region that is an n-type semiconductor.
- The device also contains a second gallium nitride region that is a metal with a first element from a specific group of elements.
Potential Applications
The technology described in this patent application could be applied in:
- Power electronics
- LED lighting
- High-frequency communication devices
Problems Solved
This technology helps in:
- Improving the efficiency of power electronics
- Enhancing the performance of LED lighting
- Increasing the speed and reliability of high-frequency communication devices
Benefits
The benefits of this technology include:
- Higher efficiency in power conversion
- Brighter and more energy-efficient LED lighting
- Faster and more reliable communication devices
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Power supply units
- Automotive lighting systems
- Wireless communication devices
Possible Prior Art
One possible prior art for this technology could be:
- Previous patents related to gallium nitride semiconductor devices with metal contacts containing specific elements.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of efficiency and performance?
This article does not provide a direct comparison with existing semiconductor devices in terms of efficiency and performance. Further research or testing may be needed to determine the exact advantages of this technology over existing ones.
What are the potential challenges in scaling up the production of semiconductor devices using this technology for mass commercial use?
The article does not address the potential challenges in scaling up production for mass commercial use. Factors such as cost, manufacturing processes, and market demand could impact the scalability of this technology. Additional studies or analyses may be required to assess these challenges.
Original Abstract Submitted
a semiconductor device of an embodiment includes a first gallium nitride region being an n-type semiconductor, and a second gallium nitride region in contact with the first gallium nitride region, the second gallium nitride region being metal, the second gallium nitride region containing a first element being at least one element selected from a group consisting of be, mg, ca, sr, ba, sc, y, la, ce, pr, nd, pm, sm, eu, gd, tb, dy, ho, er, tm, yb, lu, v, nb, ta, li, na, k, rb, ce, and zn.
