18466206. VERTICAL MULTICHANNEL GALLIUM NITRIDE TRANSISTOR simplified abstract (Robert Bosch GmbH)
Contents
- 1 VERTICAL MULTICHANNEL GALLIUM NITRIDE TRANSISTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL MULTICHANNEL GALLIUM NITRIDE TRANSISTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
VERTICAL MULTICHANNEL GALLIUM NITRIDE TRANSISTOR
Organization Name
Inventor(s)
Jens Baringhaus of Sindelfingen (DE)
Christian Huber of Ludwigsburg (DE)
Daniel Krebs of Aufhausen (DE)
VERTICAL MULTICHANNEL GALLIUM NITRIDE TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18466206 titled 'VERTICAL MULTICHANNEL GALLIUM NITRIDE TRANSISTOR
Simplified Explanation
The semiconductor component described in the abstract is a vertical HEMT (High Electron Mobility Transistor) made of gallium nitride (GaN) with a heteroepitaxial structure. It includes a drift layer and source electrodes for lateral contact, enabling the formation of a conductive channel through a two-dimensional electron gas.
- Gallium nitride (GaN) substrate
- Drift layer for electron mobility
- Heteroepitaxial structure for conductivity
- Source electrodes for lateral contact
- Formation of a two-dimensional electron gas for a conductive channel
Potential Applications
The technology can be applied in:
- High-frequency communication systems
- Power electronics
- Radar systems
Problems Solved
The technology addresses:
- High power consumption
- Low efficiency in electronic devices
Benefits
The technology offers:
- Improved performance in high-frequency applications
- Enhanced power efficiency
- Increased reliability in electronic systems
Potential Commercial Applications
The technology can be utilized in:
- Wireless communication devices
- Satellite communication systems
- Military radar systems
Possible Prior Art
Prior art in the field of vertical HEMTs includes:
- Silicon-based HEMTs
- Gallium arsenide (GaAs) HEMTs
Unanswered Questions
How does this technology compare to traditional silicon-based transistors?
The technology offers higher electron mobility and better performance in high-frequency applications compared to silicon-based transistors.
What are the potential challenges in scaling up the production of these vertical HEMTs?
Challenges may include optimizing manufacturing processes for mass production and ensuring consistent quality control in large-scale production.
Original Abstract Submitted
A semiconductor component designed as a vertical HEMT. The semiconductor component includes a substrate made of gallium nitride (GaN), a drift layer arranged thereon, and a heteroepitaxial structure which is arranged thereabove, is laterally contacted by source electrodes and is suitable for providing a conductive channel by forming a two-dimensional electron gas.
