US Patent Application 18364479. NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE simplified abstract

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NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE

Organization Name

ROHM CO., LTD.

Inventor(s)

Kentaro Chikamatsu of Kyoto-shi (JP)

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18364479 titled 'NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a nitride semiconductor device with specific layers and electrodes.

  • The device includes an electron transit layer, an electron supply layer, a gate layer, a gate electrode, an insulation layer, a source electrode, and a drain electrode.
  • The insulation layer covers the electron supply layer, gate layer, and gate electrode, and has two openings.
  • The source electrode includes a source field plate that covers the insulation layer and is positioned between the second opening and the gate layer.
  • The insulation layer is composed of two parts with different thicknesses.
  • The first insulation layer part is in contact with the drain electrode and has a smaller thickness.
  • The second insulation layer part is in contact with the source field plate and has a larger thickness.


Original Abstract Submitted

A nitride semiconductor device includes an electron transit layer, an electron supply layer, a gate layer, a gate electrode, an insulation layer covering the electron supply layer, the gate layer, and the gate electrode and including a first opening and a second opening, a source electrode, and a drain electrode. The source electrode includes a source field plate covering the insulation layer and including an end located between the second opening and the gate layer in plan view. The insulation layer includes a first insulation layer part and a second insulation layer part. The first insulation layer part is disposed on the electron supply layer in contact with the drain electrode and has a first thickness. The second insulation layer part is disposed on the gate electrode in contact with the source field plate and has a second thickness. The second thickness is greater than the first thickness.

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