17542485. HIGH ELECTRON MOBILITY TRANSISTOR WITH SOURCE AND DRAIN ELECTRODES BELOW THE CHANNEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
HIGH ELECTRON MOBILITY TRANSISTOR WITH SOURCE AND DRAIN ELECTRODES BELOW THE CHANNEL
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Cezar Bogdan Zota of Rueschlikon (CH)
Thomas Morf of Ruschlikon (CH)
HIGH ELECTRON MOBILITY TRANSISTOR WITH SOURCE AND DRAIN ELECTRODES BELOW THE CHANNEL - A simplified explanation of the abstract
This abstract first appeared for US patent application 17542485 titled 'HIGH ELECTRON MOBILITY TRANSISTOR WITH SOURCE AND DRAIN ELECTRODES BELOW THE CHANNEL
Simplified Explanation
The abstract describes a superconductor transistor structure that includes a source electrode and a drain electrode on the same plane. A channel region is present on top of the source and drain electrodes to carry a current. A gate structure made of a metallic material is placed on top of the channel region. The source and drain are positioned on the opposite side of the gate structure with respect to the channel region.
- The superconductor transistor structure includes a source electrode, drain electrode, and channel region.
- The source and drain electrodes are on the same plane.
- The channel region is designed to carry a current.
- A gate structure made of a metallic material is placed on top of the channel region.
- The source and drain electrodes are located on the side opposite to the gate structure.
Potential Applications
- High-speed computing: The superconductor transistor structure can be used in high-speed computing applications, where fast and efficient data processing is required.
- Quantum computing: The unique properties of superconductors make them suitable for quantum computing applications, and this transistor structure can contribute to the development of quantum computers.
- Energy-efficient electronics: Superconductor transistors have the potential to significantly reduce power consumption in electronic devices, leading to more energy-efficient electronics.
Problems Solved
- Heat dissipation: Superconductor transistors have the advantage of low heat generation, solving the problem of excessive heat dissipation in traditional transistors.
- Power consumption: By utilizing superconducting materials, this transistor structure can address the issue of high power consumption in electronic devices.
- Speed limitations: The use of superconductors can overcome the speed limitations of conventional transistors, enabling faster data processing.
Benefits
- Faster data processing: The superconductor transistor structure allows for faster data processing due to the unique properties of superconducting materials.
- Energy efficiency: By reducing power consumption, this technology contributes to energy-efficient electronics and helps in conserving energy resources.
- Improved performance: The use of superconductors in transistors enhances overall device performance, leading to improved efficiency and reliability.
Original Abstract Submitted
A superconductor transistor structure includes a source electrode and a drain electrode on a same plane as the source electrode. There is a channel region on top of the source and drain electrodes and configured to carry a current. A gate structure comprising a metallic material is on top of the channel region. The source and drain are located on a side that is opposite to that of the gate structure, with respect to the channel region.
