18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Toshiki Hikosaka of Kawasaki (JP)
Shinya Nunoue of Ichikawa (JP)
NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18510840 titled 'NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a nitride semiconductor with specific regions of AlGaN and a third nitride region without carbon.
- The nitride semiconductor includes a first nitride region with AlGaN, a second nitride region with AlGaN (with a lower Al content than the first region), and a third nitride region without carbon.
- The third nitride region contains Al, Ga, and N, but not carbon, with a lower carbon concentration than the second nitride region.
Potential Applications
This technology could be applied in:
- High-power electronic devices
- Optoelectronic devices
Problems Solved
This technology helps in:
- Improving the performance of nitride semiconductors
- Enhancing the efficiency of electronic and optoelectronic devices
Benefits
The benefits of this technology include:
- Increased efficiency in electronic devices
- Enhanced performance of optoelectronic devices
Potential Commercial Applications
This technology could be used in:
- LED lighting
- Power electronics
Possible Prior Art
Prior art in the field of nitride semiconductors may include:
- Previous patents on AlGaN structures
- Research papers on nitride semiconductor materials
Unanswered Questions
How does this technology compare to existing nitride semiconductor structures?
This article does not provide a direct comparison with other nitride semiconductor structures in terms of performance or efficiency.
What are the specific manufacturing processes involved in creating this nitride semiconductor?
The article does not detail the specific manufacturing processes used to create the nitride semiconductor with the described regions.
Original Abstract Submitted
According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including AlGaN (0<x1≤1), a second nitride region including AlGaN (0<x2<1, x2<x1), and a third nitride region. The second nitride region is between the first nitride region and the third nitride region. The third nitride region includes Al, Ga, and N. The third nitride region does not include carbon, alternately a third carbon concentration in the third nitride region is lower than a second carbon concentration in the second nitride region.
