18533315. INTEGRATED DEVICE, SEMICONDUCTOR DEVICE, AND INTEGRATED DEVICE MANUFACTURING METHOD simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
Contents
- 1 INTEGRATED DEVICE, SEMICONDUCTOR DEVICE, AND INTEGRATED DEVICE MANUFACTURING METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED DEVICE, SEMICONDUCTOR DEVICE, AND INTEGRATED DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
INTEGRATED DEVICE, SEMICONDUCTOR DEVICE, AND INTEGRATED DEVICE MANUFACTURING METHOD
Organization Name
Inventor(s)
Dongfa Ouyang of Shanghai (CN)
INTEGRATED DEVICE, SEMICONDUCTOR DEVICE, AND INTEGRATED DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18533315 titled 'INTEGRATED DEVICE, SEMICONDUCTOR DEVICE, AND INTEGRATED DEVICE MANUFACTURING METHOD
Simplified Explanation
The integrated device described in the patent application aims to improve the capacitor integration density by connecting two capacitors in parallel through a first conductor structure. This design allows for more efficient use of space and enhances the overall performance of the integrated device.
- The integrated device includes a first capacitor formed by a first metal layer, a first dielectric layer, and a gate metal layer, and a second capacitor formed by a gate metal layer, a second dielectric layer, and a second metal layer.
- The first metal layer is connected to the second metal layer through a first conductor structure, enabling the first and second capacitors to be connected in parallel.
Potential Applications
The technology described in the patent application could be applied in various electronic devices where high capacitor integration density is crucial, such as smartphones, tablets, and other portable electronic devices.
Problems Solved
This technology solves the problem of limited space for capacitors in integrated devices, allowing for increased capacitor integration density without compromising performance.
Benefits
The main benefit of this technology is the improved capacitor integration density, leading to enhanced performance and efficiency of integrated devices. Additionally, the parallel connection of capacitors through a first conductor structure optimizes space utilization.
Potential Commercial Applications
The technology has potential commercial applications in the semiconductor industry for the manufacturing of integrated circuits with higher capacitor integration density. Companies involved in the production of electronic devices could benefit from implementing this innovation in their products.
Possible Prior Art
One possible prior art for this technology could be the use of parallel connections in integrated circuits to enhance performance and efficiency. However, the specific design described in the patent application may offer unique advantages in terms of capacitor integration density.
Original Abstract Submitted
An integrated device, a semiconductor device, and an integrated device manufacturing method are provided, to improve capacitor integration density of the integrated device. The integrated device includes: A first dielectric layer is disposed on a first metal layer; the first metal layer, the first dielectric layer, and a gate metal layer on the first dielectric layer form a first capacitor; the gate metal layer, a second dielectric layer on the gate metal layer, and a second metal layer on the second dielectric layer form a second capacitor; and the first metal layer is connected to the second metal layer through a first conductor structure, so that the first capacitor and the second capacitor are connected in parallel.
