18177318. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Tatsuo Shimizu of Shinagawa Tokyo (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18177318 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract consists of a first gallium nitride region that is n-type semiconductor, and a second gallium nitride region that is in contact with the first region and contains a metal with a first element selected from a specific group of elements.
- The first gallium nitride region is an n-type semiconductor.
- The second gallium nitride region is in contact with the first region and contains a metal with a first element selected from a specific group of elements.
Potential Applications
The technology described in this patent application could be applied in:
- Power electronics
- LED lighting
- High-frequency communication devices
Problems Solved
This technology addresses issues related to:
- Improving semiconductor device performance
- Enhancing efficiency in power electronics
- Increasing the reliability of electronic devices
Benefits
The benefits of this technology include:
- Higher efficiency in power conversion
- Improved device reliability
- Enhanced performance in high-frequency applications
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Semiconductor manufacturing companies
- Electronics industry
- Research and development organizations
Possible Prior Art
One possible prior art related to this technology is the use of gallium nitride in semiconductor devices for high-power and high-frequency applications.
Unanswered Questions
How does the specific element in the second gallium nitride region impact the overall performance of the semiconductor device?
The specific element chosen from the group listed in the abstract could have varying effects on the properties of the semiconductor device. Further research and testing would be needed to determine the exact impact.
Are there any limitations or drawbacks to using a metal-containing second gallium nitride region in semiconductor devices?
While the metal-containing region may offer certain advantages, there could be potential limitations or drawbacks such as increased complexity in manufacturing processes or challenges in controlling the properties of the device. Further investigation would be necessary to address these aspects.
Original Abstract Submitted
A semiconductor device of an embodiment includes a first gallium nitride region being an n-type semiconductor, and a second gallium nitride region in contact with the first gallium nitride region, the second gallium nitride region being metal, the second gallium nitride region containing a first element being at least one element selected from a group consisting of Be, Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, V, Nb, Ta, Li, Na, K, Rb, Ce, and Zn.
