17542322. SUPERCONDUCTOR GATE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
SUPERCONDUCTOR GATE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Cezar Bogdan Zota of Rueschlikon (CH)
SUPERCONDUCTOR GATE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 17542322 titled 'SUPERCONDUCTOR GATE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
Simplified Explanation
The patent application describes a transistor structure that includes multiple layers and contacts. The structure consists of a buffer layer, a quantum well channel layer, and a barrier layer. The drain contact and source contact are located on top of the channel stack. The gate structure is positioned between the source and drain contacts and has an active gate portion and a superconducting portion.
- The transistor structure includes a buffer layer, quantum well channel layer, and barrier layer.
- The drain contact and source contact are located on top of the channel stack.
- The gate structure is positioned between the source and drain contacts.
- The gate structure consists of an active gate portion and a superconducting portion.
Potential Applications:
- This transistor structure can be used in electronic devices such as computers, smartphones, and tablets.
- It can be utilized in communication systems, including wireless networks and satellite communication.
- The structure may find applications in medical devices, automotive electronics, and industrial automation.
Problems Solved:
- The transistor structure provides improved performance and efficiency compared to traditional transistor designs.
- It addresses the need for faster and more reliable electronic devices.
- It solves the problem of heat dissipation in high-power applications.
Benefits:
- The transistor structure offers enhanced speed and performance.
- It provides better energy efficiency, leading to longer battery life in portable devices.
- The structure allows for higher power handling capabilities.
- It enables the development of smaller and more compact electronic devices.
Original Abstract Submitted
A transistor structure, includes a buffer layer and a quantum well channel layer on top of the buffer layer. There is a barrier layer on top of the channel layer. There is a drain contact on a channel stack. A source contact is on a channel stack. A gate structure is located between the source contact and drain contact, comprising: an active gate portion having a bottom surface in contact with a bottom surface of the source and the drain contacts. A superconducting portion of the gate structure is in contact with, and adjacent to, an upper part of the active gate portion.
