17936380. SEMICONDUCTOR EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE simplified abstract (Huawei Technologies Co., Ltd.)
Contents
SEMICONDUCTOR EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17936380 titled 'SEMICONDUCTOR EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor epitaxial structure and a semiconductor device that effectively prevents Mg ions from diffusing and causing problems in electronic gas density and mobility.
- The semiconductor epitaxial structure includes a channel layer, a composite barrier layer, and a doping layer.
- The composite barrier layer consists of a digital alloy barrier layer and an AlGaN barrier layer.
- The digital alloy barrier layer contains one or more AlN layers.
- The doping layer is placed on top of the composite barrier layer.
- The channel layer is located on the side of the composite barrier layer opposite the doping layer.
Potential applications of this technology:
- Semiconductor devices such as transistors and diodes.
- Power electronics.
- Optoelectronics.
Problems solved by this technology:
- Prevents diffusion of Mg ions from the p-GaN layer to the barrier layer and channel layer.
- Avoids negative effects on electronic gas density and mobility.
- Reduces on resistance.
Benefits of this technology:
- Improved performance and reliability of semiconductor devices.
- Enhanced efficiency in power electronics.
- Higher quality optoelectronic devices.
Original Abstract Submitted
This disclosure provides a semiconductor epitaxial structure and a semiconductor device. The semiconductor epitaxial structure includes a channel layer, a composite barrier layer, and a doping layer. The doping layer is disposed on the composite barrier layer, the channel layer is disposed on a side of the composite barrier layer that faces away from the doping layer, the composite barrier layer includes a digital alloy barrier layer and an AlGaN barrier layer that are disposed in a laminated manner, and the digital alloy barrier layer includes one or more AlN layers. The semiconductor epitaxial structure provided in this disclosure effectively prevents Mg ions in a p-GaN layer from diffusing to the barrier layer and the channel layer to affect density and mobility of two-dimensional electronic gas and cause a problem of an increase in on resistance.
