18180657. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Takenori Yasuzumi of Yokohama Kanagawa (JP)
Hung Hung of Kawasaki Kanagawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18180657 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes multiple layers of nitride semiconductor materials, electrodes, and field plate electrodes arranged in a specific configuration for improved performance.
- The device includes a first nitride semiconductor layer on a substrate, a second nitride semiconductor layer with a wider band gap on top of the first layer, source and drain electrodes on the second layer, a gate electrode between the source and drain electrodes, a first field plate electrode between the gate and drain electrodes, and a second field plate electrode projecting towards the gate electrode.
Potential Applications
This semiconductor device could be used in high-frequency and high-power applications, such as in RF amplifiers, power amplifiers, and other high-performance electronic devices.
Problems Solved
This technology helps improve the efficiency and performance of semiconductor devices by optimizing the design and configuration of the various components, leading to better overall device performance.
Benefits
The benefits of this technology include improved power handling capabilities, higher efficiency, and better overall performance in high-frequency and high-power applications.
Potential Commercial Applications
Commercial applications for this technology could include telecommunications equipment, radar systems, satellite communication systems, and other high-frequency electronic devices.
Possible Prior Art
One possible prior art could be the use of field plate electrodes in semiconductor devices to improve performance and efficiency. Additionally, the use of nitride semiconductor materials in electronic devices is a known practice in the industry.
Unanswered Questions
How does the wider band gap of the second nitride semiconductor layer contribute to the overall performance of the device?
The wider band gap of the second nitride semiconductor layer likely helps improve the device's efficiency and power handling capabilities, but the specific mechanisms behind this enhancement are not detailed in the abstract.
What are the specific advantages of having the first and second field plate electrodes in the device configuration?
The abstract mentions the presence of two field plate electrodes, but it does not elaborate on the specific advantages or functions of having these electrodes in the semiconductor device.
Original Abstract Submitted
According to one embodiment, a semiconductor device includes: a first nitride semiconductor layer provided on a substrate; a second nitride semiconductor layer provided on the first nitride semiconductor layer and having a band gap wider than that of the first nitride semiconductor layer; a source electrode and a drain electrode, being provided on the second nitride semiconductor layer separately from each other; a gate electrode provided on the second nitride semiconductor layer and arranged between the source electrode and the drain electrode; a first field plate electrode provided on the second nitride semiconductor layer, arranged between the gate electrode and the drain electrode, and electrically coupled to the source electrode; and a second field plate electrode provided on the first field plate electrode and formed to project toward the gate electrode.
