Huawei technologies co., ltd. (20240113103). INTEGRATED DEVICE, SEMICONDUCTOR DEVICE, AND INTEGRATED DEVICE MANUFACTURING METHOD simplified abstract
Contents
- 1 INTEGRATED DEVICE, SEMICONDUCTOR DEVICE, AND INTEGRATED DEVICE MANUFACTURING METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED DEVICE, SEMICONDUCTOR DEVICE, AND INTEGRATED DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED DEVICE, SEMICONDUCTOR DEVICE, AND INTEGRATED DEVICE MANUFACTURING METHOD
Organization Name
Inventor(s)
Dongfa Ouyang of Shanghai (CN)
INTEGRATED DEVICE, SEMICONDUCTOR DEVICE, AND INTEGRATED DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113103 titled 'INTEGRATED DEVICE, SEMICONDUCTOR DEVICE, AND INTEGRATED DEVICE MANUFACTURING METHOD
Simplified Explanation
The integrated device described in the patent application aims to improve the capacitor integration density by connecting two capacitors in parallel through a conductor structure. Here are some key points to explain the innovation:
- Integration of capacitors in an integrated device to improve density.
- Utilization of multiple metal layers and dielectric layers to form capacitors.
- Connection of capacitors in parallel through a conductor structure.
- Enhanced performance and efficiency of the integrated device.
Potential Applications
The technology described in the patent application could be applied in various fields such as:
- Semiconductor manufacturing
- Integrated circuit design
- Electronic devices
Problems Solved
The technology addresses the following issues:
- Limited capacitor integration density in integrated devices
- Efficiency and performance limitations in current designs
Benefits
The technology offers the following benefits:
- Improved capacitor integration density
- Enhanced performance and efficiency of integrated devices
- Potential for smaller and more compact electronic devices
Potential Commercial Applications
The technology could be commercially applied in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art in this field is the use of multi-layered capacitors in integrated circuits to improve performance and efficiency.
Unanswered Questions
1. How does the integration of capacitors in parallel affect the overall performance of the integrated device? 2. Are there any limitations or challenges in implementing this technology in mass production of integrated devices?
Original Abstract Submitted
an integrated device, a semiconductor device, and an integrated device manufacturing method are provided, to improve capacitor integration density of the integrated device. the integrated device includes: a first dielectric layer is disposed on a first metal layer; the first metal layer, the first dielectric layer, and a gate metal layer on the first dielectric layer form a first capacitor; the gate metal layer, a second dielectric layer on the gate metal layer, and a second metal layer on the second dielectric layer form a second capacitor; and the first metal layer is connected to the second metal layer through a first conductor structure, so that the first capacitor and the second capacitor are connected in parallel.
