US Patent Application 17752970. HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING simplified abstract
Contents
HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
Pravanshu Mohanta of Hsinchu (TW)
Wei-Ting Chang of Miaoli County (TW)
HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING - A simplified explanation of the abstract
This abstract first appeared for US patent application 17752970 titled 'HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING
Simplified Explanation
- The patent application describes a method of manufacturing a High-Electron-Mobility Transistor (HEMT). - The method involves several steps, starting with preparing a substrate. - A first buffer is formed over the substrate, followed by a second buffer. - The second buffer is doped with a dopant such as carbon, with a gradient in concentration through its thickness. - A channel layer, such as GaN, is formed over the second buffer. - A barrier layer, such as aluminum gallium nitride (AlGaN), is formed over the channel layer. - Finally, drain, source, and gate terminals are formed for the HEMT. - The innovation lies in the specific doping technique used in the second buffer layer, which allows for a gradient in dopant concentration. - This gradient in dopant concentration may enhance the performance and efficiency of the HEMT. - The method described in the patent application provides a novel approach to manufacturing HEMTs, potentially leading to improved electronic devices.
Original Abstract Submitted
A method of manufacturing a High-Electron-Mobility Transistor (HEMT) includes: preparing a substrate; forming a first buffer over the substrate; forming a second buffer over the first buffer, wherein forming the second buffer includes doping a first thickness of a material such as gallium nitride (GaN) with a first concentration of a dopant such as carbon, and doping a second thickness of the material with a second concentration of the dopant such that the second concentration of dopant has a gradient though the second thickness which progressively decreases in a direction away from the first thickness; forming a channel layer such as a GaN channel over the second buffer; forming a barrier layer such as aluminum gallium nitride (AlGaN) over the channel layer; and forming drain, source and gate terminals for the HEMT.
