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Category:H01L29/20
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Pages in category "H01L29/20"
The following 69 pages are in this category, out of 69 total.
1
- 17933882. COMPOSITE NANOSHEET TUNNEL TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17936380. SEMICONDUCTOR EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE simplified abstract (Huawei Technologies Co., Ltd.)
- 17958094. TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract (Intel Corporation)
- 17984025. 3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18166391. HYBRID GATE FIELD EFFECT TRANSISTOR, METHOD FOR PREPARING HYBRID GATE FIELD EFFECT TRANSISTOR, AND SWITCH CIRCUIT simplified abstract (Huawei Technologies Co., Ltd.)
- 18171988. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18176453. NITRIDE SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18177318. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18180657. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18181042. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18193859. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18264202. NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR DEVICE simplified abstract (Panasonic Intellectual Property Management Co., Ltd.)
- 18274223. NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18335492. VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS simplified abstract (Samsung Electronics Co., Ltd.)
- 18370134. WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER WIDTHS simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18370144. WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18373357. WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18373360. WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED THROUGH WAFER VIAS OUTSIDE OF TRANSISTOR LAYOUT simplified abstract (SKYWORKS SOLUTIONS, INC.)
- 18463417. FIELD EFFECT TRANSISTOR, PREPARATION METHOD THEREOF, AND SWITCH CIRCUIT simplified abstract (Huawei Technologies Co., Ltd.)
- 18466206. VERTICAL MULTICHANNEL GALLIUM NITRIDE TRANSISTOR simplified abstract (Robert Bosch GmbH)
- 18466223. SEMICONDUCTOR ELEMENT WITH SHIELDING simplified abstract (Robert Bosch GmbH)
- 18467961. SEMICONDUCTOR ELEMENTS WITH FIELD SHIELDING BY POLARIZATION DOPING simplified abstract (Robert Bosch GmbH)
- 18488729. VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER simplified abstract (Robert Bosch GmbH)
- 18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18513404. HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18532505. LAMINATE AND METHOD OF MANUFACTURING LAMINATE simplified abstract (Japan Display Inc.)
- 18533315. INTEGRATED DEVICE, SEMICONDUCTOR DEVICE, AND INTEGRATED DEVICE MANUFACTURING METHOD simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
2
- 20240014306. Semiconductor Structure with Features of D-mode and E-mode GaN Devices and Semiconductor Process Thereof simplified abstract (United Microelectronics Corp.)
- 20240021678. PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIER REGIONS simplified abstract (MACOM Technology Solutions Holdings, Inc.)
- 20240030303. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (ROHM CO., LTD.)
- 20240039486. COMPOUND SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR COMPOUND SEMICONDUCTOR DEVICE, AND AMPLIFIER simplified abstract (Fujitsu Limited)
- 20240047451. NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING THE SAME simplified abstract (INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.)
- 20240055509. NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.)
B
- Blockchain patent applications on February 15th, 2024
- Blockchain patent applications on February 1st, 2024
- Blockchain patent applications on February 8th, 2024
- Blockchain patent applications on January 11th, 2024
- Blockchain patent applications on January 18th, 2024
- Blockchain patent applications on January 25th, 2024
- Blockchain patent applications on March 28th, 2024
H
I
- Intel corporation (20240113220). TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract
- Intel Corporation patent applications on April 4th, 2024
- Intel Corporation patent applications on January 18th, 2024
- International business machines corporation (20240096947). COMPOSITE NANOSHEET TUNNEL TRANSISTORS simplified abstract
- International Business Machines Corporation patent applications on March 21st, 2024
K
- Kabushiki kaisha toshiba (20240096967). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240096969). NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Kabushiki kaisha toshiba (20240097000). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- KABUSHIKI KAISHA TOSHIBA patent applications on March 14th, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on March 21st, 2024
R
S
- Samsung electronics co., ltd. (20240096415). VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS simplified abstract
- Samsung electronics co., ltd. (20240113184). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung Electronics Co., Ltd. patent applications on April 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
T
U
- US Patent Application 17752970. HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING simplified abstract
- US Patent Application 17804751. GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME simplified abstract
- US Patent Application 18248990. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPONENT INCLUDING THE SAME simplified abstract
- US Patent Application 18362240. STRAIN RELIEF TRENCHES FOR EPITAXIAL GROWTH simplified abstract
- US Patent Application 18363214. SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract
- US Patent Application 18364479. NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18364679. INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITH OPTIMIZATION OF DEVICE PERFORMANCE simplified abstract
- US Patent Application 18365995. NANO TRANSISTORS WITH SOURCE/DRAIN HAVING SIDE CONTACTS TO 2-D MATERIAL simplified abstract