18467961. SEMICONDUCTOR ELEMENTS WITH FIELD SHIELDING BY POLARIZATION DOPING simplified abstract (Robert Bosch GmbH)
Contents
- 1 SEMICONDUCTOR ELEMENTS WITH FIELD SHIELDING BY POLARIZATION DOPING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR ELEMENTS WITH FIELD SHIELDING BY POLARIZATION DOPING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR ELEMENTS WITH FIELD SHIELDING BY POLARIZATION DOPING
Organization Name
Inventor(s)
Dragos Costachescu of Reutlingen (DE)
Humberto Rodriguez Alvarez of Kornwestheim (DE)
Jens Baringhaus of Sindelfingen (DE)
Muhammad Alshahed of Stuttgart (DE)
SEMICONDUCTOR ELEMENTS WITH FIELD SHIELDING BY POLARIZATION DOPING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18467961 titled 'SEMICONDUCTOR ELEMENTS WITH FIELD SHIELDING BY POLARIZATION DOPING
Simplified Explanation
The semiconductor component described in the abstract is a diode or transistor with two vertically stacked electrodes, a substrate made of gallium nitride, and a shielding layer for forming a space charge zone to shield an electric field in blocking or reverse operation.
- The semiconductor component includes two vertically stacked electrodes.
- The substrate is made of gallium nitride.
- A shielding layer is present to form a space charge zone for shielding the electric field.
- The shielding layer helps in blocking or reverse operation of the semiconductor component.
Potential Applications
The technology described in this patent application could be applied in:
- Power electronics
- LED lighting
- RF amplifiers
Problems Solved
This technology helps in:
- Improving efficiency in power electronics
- Enhancing performance in LED lighting
- Optimizing RF amplifier operation
Benefits
The benefits of this technology include:
- Increased efficiency
- Enhanced performance
- Improved reliability
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Power supply units
- Electric vehicles
- Communication systems
Possible Prior Art
One possible prior art could be the use of gallium nitride in semiconductor devices for improved performance and efficiency.
Unanswered Questions
How does the shielding layer impact the overall performance of the semiconductor component?
The shielding layer plays a crucial role in forming a space charge zone for shielding the electric field, but the specific impact on performance needs further clarification through testing and analysis.
What are the potential challenges in scaling up this technology for mass production?
While the technology shows promise in improving efficiency and performance, scaling it up for mass production may pose challenges in terms of cost, manufacturing processes, and integration with existing systems.
Original Abstract Submitted
A semiconductor component, in particular diode or transistor. The semiconductor component includes two electrodes configured vertically one above the other, a substrate () made of gallium nitride, and a shielding layer for forming a space charge zone for shielding of an electric field when the semiconductor component is connected in a blocking operation or reverse direction.
