US Patent Application 18363214. SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
Organization Name
Inventor(s)
Tatsuo Shimizu of Shinagawa (JP)
Yukio Nakabayashi of Yokohama (JP)
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18363214 titled 'SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
Simplified Explanation
The patent application describes a semiconductor device with specific layers and regions.
- The device includes a silicon carbide layer, a silicon oxide layer, and a region between them.
- The region has a nitrogen concentration of at least 1×10cm.
- The nitrogen concentration in the layers and region has a peak in the region.
- The nitrogen concentration at a position 1 nm away from the peak towards the silicon oxide layer is no more than 1×10cm.
- The carbon concentration at that position is also no more than 1×10cm.
Original Abstract Submitted
A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1×10cm. Nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1×10cm, and a carbon concentration at the position is equal to or less than 1×10cm.
