20240047451. NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING THE SAME simplified abstract (INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.)
NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING THE SAME
Organization Name
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
Inventor(s)
NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240047451 titled 'NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a patent application for a nitride-based semiconductor integrated circuit (IC) chip. The IC chip includes a substrate and intra-transistor isolation regions formed on the substrate to define power domains for the integrated transistors. An epitaxial body layer is disposed over the substrate and isolation regions, and above it are first and second nitride-based layers. The epitaxial body layer and substrate are made of the same material, and the isolation regions are implanted with a doping polarity opposite to that of the substrate. By implementing the epitaxial body layer over the isolation regions, the quality of the heterojunction formed between the nitride-based semiconductor layers can be guaranteed, as the impact of implantation on the formation of the heterojunction interface can be eliminated.
- The patent application describes a nitride-based semiconductor IC chip with improved heterojunction formation.
- The IC chip includes a substrate, intra-transistor isolation regions, an epitaxial body layer, and nitride-based layers.
- The isolation regions are implanted with a doping polarity opposite to that of the substrate.
- The epitaxial body layer is implemented over the isolation regions to ensure high-quality heterojunction formation.
- This technology eliminates the negative impact of implantation on the formation of the heterojunction interface.
Potential Applications
- Semiconductor industry
- Integrated circuit manufacturing
- Power electronics
Problems Solved
- Ensures high-quality heterojunction formation in nitride-based semiconductor IC chips
- Eliminates the negative impact of implantation on the formation of the heterojunction interface
Benefits
- Improved performance and reliability of nitride-based semiconductor IC chips
- Enhanced power domain definition and isolation in integrated transistors
- Simplified manufacturing process for nitride-based semiconductor IC chips
Original Abstract Submitted
a nitride-based semiconductor integrated circuit (ic) chip is provided. the ic chip comprises: a substrate; intra-transistor isolation regions formed in a surface of the substrate for defining power domains respectively for transistors integrated in the ic chip; an epitaxial body layer disposed over the substrate and the intra-transistor isolation regions; a first and a second nitride-based layers disposed above the epitaxial body layer. the epitaxial body layer and the substrate are formed of a same material and each of the one or more intra-transistor isolation regions is implanted to have a doping polarity opposite to a doping polarity of the substrate. by the implementation of the epitaxial body layer over the isolation regions, the quality of the heterojunction formed between the nitride-based semiconductor layers can be guaranteed as the impact of implantation of the isolation regions to the formation of heterojunction interface can be eliminated.
