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Category:G11C11/22
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Pages in category "G11C11/22"
The following 69 pages are in this category, out of 69 total.
1
- 17726086. COMPUTE-IN-MEMORY DEVICE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17818839. Three-Dimensional Memory Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17821646. WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17830100. SWITCH AND HOLD BIASING FOR MEMORY CELL IMPRINT RECOVERY simplified abstract (Micron Technology, Inc.)
- 17831368. ROBUST FUNCTIONALITY FOR MEMORY MANAGEMENT ASSOCIATED WITH HIGH-TEMPERATURE STORAGE AND OTHER CONDITIONS simplified abstract (Micron Technology, Inc.)
- 17836228. MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17840003. FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICES WITH ENHANCED READ WINDOW simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17888298. STORING BITS WITH CELLS IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17893672. WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17898923. Word Line Precharging Systems and Methods simplified abstract (Micron Technology, Inc.)
- 17899859. MEMORY ARRAY WITH COMPENSATED WORD LINE ACCESS DELAY simplified abstract (Micron Technology, Inc.)
- 17957591. SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-CAPACITOR DEVICES simplified abstract (Intel Corporation)
- 17957945. DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A FERROELECTRIC RESISTIVE JUNCTION simplified abstract (Intel Corporation)
- 17957957. MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT simplified abstract (Intel Corporation)
- 17958395. INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS simplified abstract (Intel Corporation)
- 18053182. Ferroelectric Memory Device And Electronic Device Including The Same simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18060372. DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18151483. MEMORY ARRAY AND OPERATION METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18156593. MEMORY CELL AND METHOD OF OPERATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18203877. TECHNIQUES TO MANUFACTURE FERROELECTRIC MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18217730. NON-VOLATILE MEMORY DEVICE AND SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18234636. READ CONTROL SIGNAL GENERATION FOR MEMORY simplified abstract (Micron Technology, Inc.)
- 18235740. Ferroelectric Assemblies and Methods of Forming Ferroelectric Assemblies simplified abstract (Micron Technology, Inc.)
- 18364616. EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18447997. FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18459962. NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract (Kioxia Corporation)
- 18486493. DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18492964. MEMORY WITH FRAM AND SRAM OF IC simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18493856. SIDEWALL SPACER STRUCTURE TO INCREASE SWITCHING PERFORMANCE OF FERROELECTRIC MEMORY DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18501360. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18506177. EMBEDDED FERROELECTRIC MEMORY CELL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18510975. GRID STRUCTURE TO REDUCE DOMAIN SIZE IN FERROELECTRIC MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516908. INTEGRATED CIRCUIT INCLUDING THREE-DIMENSIONAL MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518716. METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18518736. MEMORY CELL AND METHOD OF OPERATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521872. SWITCH AND HOLD BIASING FOR MEMORY CELL IMPRINT RECOVERY simplified abstract (Micron Technology, Inc.)
- 18525301. ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
H
I
- Intel corporation (20240105248). TCAM WITH HYSTERETIC OXIDE MEMORY CELLS simplified abstract
- Intel corporation (20240112730). DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A FERROELECTRIC RESISTIVE JUNCTION simplified abstract
- Intel corporation (20240114692). INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS simplified abstract
- Intel Corporation patent applications on April 4th, 2024
- Intel Corporation patent applications on March 28th, 2024
K
M
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- Taiwan semiconductor manufacturing co., ltd. (20240096388). MEMORY CELL AND METHOD OF OPERATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097032). METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240114691). ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS simplified abstract
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
U
- US Patent Application 17829046. PMOS THRESHOLD COMPENSATION SENSE AMPLIFIER FOR FeRAM DEVICES simplified abstract
- US Patent Application 18202584. DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING simplified abstract
- US Patent Application 18245098. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE simplified abstract
- US Patent Application 18343972. Semiconductor Devices Including Ferroelectric Memory and Methods of Forming the Same simplified abstract
- US Patent Application 18366191. MEMORY DEVICE WITH CONTENT ADDRESSABLE MEMORY UNITS simplified abstract
- US Patent Application 18366740. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract
- US Patent Application 18446648. Semiconductor Devices Including Decoupling Capacitors simplified abstract