18521872. SWITCH AND HOLD BIASING FOR MEMORY CELL IMPRINT RECOVERY simplified abstract (Micron Technology, Inc.)
Contents
- 1 SWITCH AND HOLD BIASING FOR MEMORY CELL IMPRINT RECOVERY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SWITCH AND HOLD BIASING FOR MEMORY CELL IMPRINT RECOVERY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SWITCH AND HOLD BIASING FOR MEMORY CELL IMPRINT RECOVERY
Organization Name
Inventor(s)
Angelo Visconti of Appiano Gentile (CO) (IT)
SWITCH AND HOLD BIASING FOR MEMORY CELL IMPRINT RECOVERY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18521872 titled 'SWITCH AND HOLD BIASING FOR MEMORY CELL IMPRINT RECOVERY
Simplified Explanation
The patent application describes methods, systems, and devices for switch and hold biasing for memory cell imprint recovery. This involves applying recovery pulses to memory cells with specific voltage magnitudes to maintain saturation polarization and prevent a reduction of polarization.
- Memory device configured for imprint recovery procedure
- Recovery pulses with specific voltage polarities and magnitudes
- First portion of pulse imposes saturation polarization
- Second portion maintains saturation polarization
- Prevents reduction of polarization in memory cell
Potential Applications
The technology could be applied in:
- Non-volatile memory devices
- Ferroelectric capacitors
- Memory cell imprint recovery systems
Problems Solved
The technology addresses issues such as:
- Reduction of polarization in memory cells
- Recovery of memory cell imprint
- Maintenance of saturation polarization
Benefits
The benefits of this technology include:
- Improved memory cell performance
- Enhanced reliability of memory devices
- Extended lifespan of memory cells
Potential Commercial Applications
Potential commercial applications of this technology could include:
- Memory device manufacturing
- Semiconductor industry
- Data storage solutions
Possible Prior Art
One possible prior art related to this technology is the use of recovery pulses in memory devices to maintain polarization levels and prevent degradation over time.
Unanswered Questions
How does this technology compare to existing memory cell imprint recovery methods?
This article does not provide a direct comparison to existing methods for memory cell imprint recovery. It would be beneficial to understand the advantages and limitations of this new approach compared to traditional techniques.
What impact could this technology have on the overall performance and reliability of memory devices?
While the benefits of the technology are outlined, the specific impact on the overall performance and reliability of memory devices is not detailed. Further information on how this innovation could enhance memory device functionality would be valuable for potential users and manufacturers.
Original Abstract Submitted
Methods, systems, and devices for switch and hold biasing for memory cell imprint recovery are described. A memory device may be configured to perform an imprint recovery procedure that includes applying one or more recovery pulses to memory cells, where each recovery pulse is associated with a voltage polarity and includes a first portion with a first voltage magnitude and a second portion with a second voltage magnitude that is lower than the first voltage magnitude. In some examples, the first voltage magnitude may correspond to a voltage that imposes a saturation polarization on a memory cell (e.g., on a ferroelectric capacitor, a polarization corresponding to the associated voltage polarity) and the second voltage magnitude may correspond to a voltage magnitude that is high enough to maintain the saturation polarization (e.g., to prevent a reduction of polarization) of the memory cell.
