18518736. MEMORY CELL AND METHOD OF OPERATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 MEMORY CELL AND METHOD OF OPERATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY CELL AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY CELL AND METHOD OF OPERATING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Sai-Hooi Yeong of Hsinchu (TW)
MEMORY CELL AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18518736 titled 'MEMORY CELL AND METHOD OF OPERATING THE SAME
Simplified Explanation
The abstract describes a memory cell with a read word line, a write transistor, and a read transistor connected to the write transistor. The read transistor includes a ferroelectric layer and is used to adjust the polarization state corresponding to the stored data value of the memory cell.
- Memory cell with read word line, write transistor, and read transistor
- Read transistor includes ferroelectric layer
- Write transistor adjusts polarization state of read transistor
- Polarization state corresponds to stored data value
Potential Applications
This technology could be applied in:
- Non-volatile memory devices
- High-speed data storage systems
- Embedded systems requiring low power consumption
Problems Solved
This technology helps solve:
- Data loss in volatile memory
- Slow data access in traditional memory systems
- High power consumption in memory devices
Benefits
The benefits of this technology include:
- Faster data access speeds
- Lower power consumption
- Improved data retention
Potential Commercial Applications
This technology could be commercially applied in:
- Consumer electronics
- Automotive systems
- Industrial automation
Possible Prior Art
One possible prior art for this technology is the use of ferroelectric materials in memory devices dating back to the early 2000s.
Unanswered Questions
How does the write transistor adjust the polarization state of the read transistor?
The abstract does not provide specific details on the mechanism by which the write transistor adjusts the polarization state of the read transistor.
What is the expected lifespan of memory cells using this technology?
The abstract does not mention the expected lifespan or durability of memory cells utilizing this technology.
Original Abstract Submitted
A memory cell includes a read word line extending in a first direction, a write transistor, and a read transistor coupled to the write transistor. The read transistor includes a ferroelectric layer, a drain terminal of the read transistor directly connected to the read word line, and a source terminal of the read transistor coupled to a first node. The write transistor is configured to adjust a polarization state of the read transistor, the polarization state corresponding to a stored data value of the memory cell.
