US Patent Application 17829046. PMOS THRESHOLD COMPENSATION SENSE AMPLIFIER FOR FeRAM DEVICES simplified abstract
Contents
PMOS THRESHOLD COMPENSATION SENSE AMPLIFIER FOR FeRAM DEVICES
Organization Name
Inventor(s)
Daniele Vimercati of El Dorado Hills CA (US)
PMOS THRESHOLD COMPENSATION SENSE AMPLIFIER FOR FeRAM DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17829046 titled 'PMOS THRESHOLD COMPENSATION SENSE AMPLIFIER FOR FeRAM DEVICES
Simplified Explanation
The patent application describes a memory device with a plate line and a pair of ferroelectric layers that act as memory cells.
- The ferroelectric layers are connected to opposite sides of the plate line.
- Each ferroelectric layer is also connected to a digit line.
- A sense amplifier is connected to the digit lines and amplifies the voltages received from the memory cells.
- The sense amplifier includes a threshold voltage compensated latch.
- The latch is made up of multiple p-channel transistors.
- The latch compensates for variations in threshold voltages due to process, voltage, or temperature differences.
Original Abstract Submitted
Systems and methods are related to a memory device including a plate line. The memory device also includes a pair of ferroelectric layers implementing a pair of memory cells and coupled to opposite sides of the plate line. The memory device further includes a pair of digit lines each coupled to a respective ferroelectric layer of the pair of ferroelectric layers. The memory device also includes a sense amplifier coupled to the pair of digit lines and configured to sense and amplify voltages received at the digit lines from the respective memory cells. The sense amplifier includes a threshold voltage compensated latch that includes multiple p-channel transistors and is configured to compensate for process, voltage, or temperature variation mismatches between the threshold voltages of the multiple p-channel transistors.
