17957957. MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT simplified abstract (Intel Corporation)
Contents
- 1 MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT
Organization Name
Inventor(s)
Sou-Chi Chang of Portland OR (US)
Chia-Ching Lin of Portland OR (US)
Saima Siddiqui of HIllsboro OR (US)
Sarah Atanasov of Beaverton OR (US)
Bernal Granados Alpizar of Beaverton OR (US)
Uygar Avci of Portland OR (US)
MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 17957957 titled 'MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT
Simplified Explanation
The patent application describes techniques and mechanisms for operating a ferroelectric (FE) circuit element as a cell of a crossbar memory array.
- The crossbar memory array includes a bit line, a word line, and a data storage cell with a FE circuit element that extends to each of the bit line and the word line.
- The data storage cell is a FE circuit element with terminals at different respective positions on the bit line or the word line, and one or more material layers between the terminals, including a FE nitride or a FE oxide layer.
- The FE circuit element can selectively enable or disable operation as a diode.
- The memory array is coupled to circuitry that corresponds a given mode of operation of the FE circuit element to a particular data bit value.
Potential Applications
This technology could be applied in:
- Non-volatile memory devices
- Neuromorphic computing systems
- High-density data storage solutions
Problems Solved
- Increased data storage density
- Improved energy efficiency
- Enhanced data processing speed
Benefits
- Faster data access times
- Lower power consumption
- Higher data storage capacity
Potential Commercial Applications
- Memory chip manufacturing companies
- Electronics manufacturers
- Data center operators
Possible Prior Art
One possible prior art could be the use of ferroelectric materials in memory devices for their non-volatile properties and fast switching speeds.
Unanswered Questions
How does this technology compare to existing non-volatile memory solutions in terms of speed and energy efficiency?
The article does not provide a direct comparison with existing non-volatile memory solutions, so it is unclear how this technology stacks up against them.
What are the potential challenges in scaling up this technology for mass production?
The article does not address the potential challenges in scaling up this technology for mass production, leaving this aspect open for further exploration and investigation.
Original Abstract Submitted
Techniques and mechanisms for operating a ferroelectric (FE) circuit element as a cell of a crossbar memory array. In an embodiment, the crossbar memory array comprises a bit line, a word line, and a data storage cell which includes a circuit element that extends to each of the bit line and the word line. The data storage cell is a FE circuit element which comprises terminals, each at a different respective one of the bit line or the word line, and one or more material layers between said terminals. One such layer comprises a FE nitride or a FE oxide. The FE circuit element is operable to selectively enable, or disable, operation as a diode. In another embodiment, the memory array is coupled to circuitry which corresponds a given mode of operation of the FE circuit element to a particular data bit value.
