18447997. FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Perng-Fei Yuh of Walnut Creek CA (US)

FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447997 titled 'FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY

Simplified Explanation

- Memory device with multi-gate FeFET memory cells - Each memory cell has a first source/drain terminal, a second source/drain terminal, and a gate with multiple ferroelectric layers - Ferroelectric layers have unique switching E-field for each layer

Potential Applications

- Non-volatile memory storage - Low-power memory devices - High-density memory solutions

Problems Solved

- Reduced power consumption in memory devices - Increased data retention in memory cells - Enhanced performance and reliability of memory storage

Benefits

- Improved energy efficiency - Higher data storage capacity - Faster data access and retrieval

Original Abstract Submitted

A memory device includes a plurality of memory cells. Each memory cell includes a multi-gate FeFET that has a first source/drain terminal, a second source/drain terminal, and a gate with a plurality of ferroelectric layers configured such that each of the ferroelectric layers has a respective unique switching E-field.