17821646. WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)

WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES

Organization Name

Micron Technology, Inc.

Inventor(s)

Fatma Arzum Simsek-ege of Boise ID (US)

Mingdong Cui of Folsom CA (US)

WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17821646 titled 'WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES

Simplified Explanation

• • Explanation:**

The patent application describes methods, systems, and devices for word line drivers for multiple-die memory devices. These memory devices consist of at least two semiconductor dies, one associated with memory cells and access lines, and the other associated with access line driver circuitry.

• Memory device includes multiple semiconductor dies
• One die has memory cells and access lines, while the other has access line driver circuitry
• Second die is located in contact with or adjacent to the first die
• Electrical contacts are formed to couple the access line driver circuitry with the access line conductors of the first die
• Cavities may be formed through the second die and at least a portion of the first die for forming electrical contacts

• • Potential Applications:**
• Memory devices in electronic devices such as smartphones, tablets, and computers
• Data storage in servers and data centers
• Automotive electronics for storing critical information

• • Problems Solved:**
• Efficient coupling of access line driver circuitry with memory cells
• Integration of multiple semiconductor dies in memory devices
• Improving performance and reliability of memory devices

• • Benefits:**
• Higher memory device performance
• Increased data storage capacity
• Enhanced reliability and durability of memory devices

Original Abstract Submitted

Methods, systems, and devices for word line drivers for multiple-die memory devices are described. A memory device may include a first semiconductor die associated with at least memory cells and corresponding access lines of the memory device, and a second semiconductor die associated with at least access line driver circuitry of the memory device. The second semiconductor die may be located in contact with or otherwise adjacent to the first semiconductor die, and electrical contacts may be formed to couple the access line driver circuitry of the second semiconductor die with the access line conductors of the first semiconductor die. For example, cavities may be formed through the second semiconductor die and at least a portion of the first semiconductor die, and the electrical contacts may be formed between the semiconductor dies at least in part from forming a conductive material in the cavities.