17898923. Word Line Precharging Systems and Methods simplified abstract (Micron Technology, Inc.)

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Word Line Precharging Systems and Methods

Organization Name

Micron Technology, Inc.

Inventor(s)

Angelo Visconti of Appiano (IT)

Word Line Precharging Systems and Methods - A simplified explanation of the abstract

This abstract first appeared for US patent application 17898923 titled 'Word Line Precharging Systems and Methods

Simplified Explanation

- Memory system can boost signal to precharge word line - Memory device includes voltage shaping circuitry and memory controller - Controller adjusts characteristic of word line select control signal - Signal is adjusted before being transmitted to memory cell

Potential Applications

This technology can be applied in various memory devices such as DRAM, SRAM, and flash memory to improve performance and efficiency.

Problems Solved

- Enhances memory system performance by selectively boosting signal to precharge word line - Improves overall efficiency of memory devices by adjusting characteristics of word line select control signal

Benefits

- Faster memory access times - Increased memory system efficiency - Enhanced overall performance of memory devices


Original Abstract Submitted

Systems and methods described herein may enable a memory system to selectively provide a signal boost to a word line to precharge the word line. A memory device may include voltage shaping circuitry and a memory controller. The memory controller may cause the voltage shaping circuitry to adjust a characteristic of a word line select control signal transmitted via the word line prior to the word line select control signal being transmitted to a memory cell.